Effects of Growth Temperature on the Morphological, Structural, and Electrical Properties of CIGS Thin Film for Use in Solar Cell Applications
نویسندگان
چکیده
Cu-In-Ga-Se nanoparticles (NPs) were synthesized using a colloidal route process. The effects of growth temperature (GT) on the properties CuInGaSe2 (CIGS) thin films made from these investigated TEM, PL, XRD, and SEM techniques. NPs at temperatures ranging 90 °C to 105 then annealed 550 for 7 min under Se ambient. resulting CIGS film, formed GT (referred as GT90-CIGS), showed tetragonal structure, large grain size, high sunlight absorption. It had band gap energy (Eg) approximately 0.94 eV. Non-vacuum GT90-CIGS-based solar cells fabricated varying thicknesses CdS buffer layer. maximum power conversion efficiency achieved was 8.3% with an optimized device structure Al/ITO/ZnO/CdS/CIGS/Mo.
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ژورنال
عنوان ژورنال: Energies
سال: 2023
ISSN: ['1996-1073']
DOI: https://doi.org/10.3390/en16114467